5 edition of Semiconductors and Semimetals Volume 66: Intersubband Transitions in Quantum Wells found in the catalog.
October 13, 1999
by Academic Press
Written in English
|The Physical Object|
|Number of Pages||300|
This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). References 1. H. Kroemer: All that glitters isn’t silicon or steel and aluminum revisited. In: Future Trends in Microelectronics: Reﬂections on the Road to Nanotech- nology. Applied Sciences, vol E, ch. 1, ed by S. Luryi, J. Xu, A. Zaslavsky (Kluwer, Dordrecht ) pp. 1–
Ebook Intersubband Transitions in Quantum Wells: Physics and Device Applications II, Volume 66 (Semiconductors and Semimetals) Download The Text Mining Handbook: Advanced Approaches in Analyzing Unstructured Data Pdf Download Sams Teach Yourself Visual C# in 24 Hours: Complete Starter Kit free ebook. The field of ultrafast spectroscopy of semiconductors and their nanostruc tures continues to be an active field of research. Exciting new developments have taken place since the first edition of this book was completed in This revised edition includes a discussion of many of these recent develop ments in the field. This is accomplished by adding a chapter on Recent De velopments at the.
Larger THz scattering times were reported for electrons in other III–V 2DEGs at 4 K, with τ = ps for a three-well terahertz quantum cascade laser design (electron density N ~ 2 × 10 15 cm −3 in the occupied wells) and τ = ps for a modulation-doped multiple quantum well (N ~ 1 × 10 17 cm −3 in each quantum well). Topics include: introduction to quantum mechanics, Potential barriers and wells, electronic energy levels in periodic potentials, tunneling through potential barriers, distribution functions and density of states, optical properties of interband and intersubband transitions, electrical properties, techniques and measurements, growth issues.
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Ultrawide Bandgap Semiconductors, Volume in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond.
Purchase Intersubband Transitions in Quantum Wells: Physics and Device Applications, Volume 62 - 1st Edition. Print Book & E-Book. ISBNBook Edition: 1. Semiconductors and Semimetals, Volume Intersubband Transitions in Quantum Wells: Physics and Device Applications II by Robert K. Willardson (Series Editor), Gerd Mueller (Editor).
Read the latest chapters of Semiconductors and Semimetals atElsevier’s leading platform of peer-reviewed scholarly literature Chapter 1 The Basic Physics of Intersubband Transitions.
Manfred Helm. Pages Download PDF. select article Chapter 3 Quantum Well Infrared Photodetector Physics and Novel Devices. https. Get this from a library. Intersubband transitions in quantum wells: physics and device applications I.
[H C Liu; Federico Capasso;] -- Since its inception inthe series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions ( J.
lm). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the. Research on intersubband transitions in quantum wells has led to several practical devices, such as the quantum well infrared photodetector (QWIP) and the quantum cascade laser (QCL).
These are two of the success stories in using quantum wells for practical device applications. We present photoinduced intersubband absorption measurements in HgCdTe undoped quantum wells. The transition energies and the linewidths are well described by a full 8×8 k⋅p Kane model calculation.
Also, based on this model we show that different in‐plane effective masses for the first and second electron subbands should be considered in order to properly fit the low energy side of the. Liu and F. Capasso, Intersubband Transitions in Quantum Wells: Physics and Device Application II, vol.
66 of Semiconductors and semimetals, Academic. Intersubband Transitions in InxGa1-xAs/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection - Volume - Clayton L.
Workman, Zhiming Wang, Wenquan Ma, Christi E. George, R. Panneer Selvam, Gregory J. Salamo, Qiaoying Zhou, M. Omar Manasreh. Intersubband Transitions in. Quan turn Wells Physics and Device Applications I SEMICONDUCTORS AND SEMIMETALS Volume 62 Semiconductors and Semimetals A Treatise Edited by R K Willardson Eicke R Weber DEPARTMENT OF MATERIALS SCIENCE UNIVERSITY OF CALIFORNIA CONSULTING PHYSICIST SPOKANE, WASHINGTON AND MINWAL ENCINJBFUNG AT BERKELEY Intersubband Transitions in Quantum Wells.
In this invited paper of the 28th International Conference of the Physics of Semiconductors (ICPS), we discuss the peculiar quantum electrodynamical properties of a semiconductor microcavity system, in which a cavity photon mode is strongly coupled to an intersubband transition of a doped quantum well system.
In this kind of semiconductor system, it. The authors report the study of intersubband transitions in ZnCdMgSe-based wide band gap II-VI semiconductors. The samples were prepared by molecular beam epitaxy on InP substrates. Both ZnCdSe∕ZnCdMgSe multiple quantum wells and CdSe∕ZnCdMgSe quantum dot multilayer stacks were grown.
Strong intersubband absorption was observed in the samples. If the address matches an existing account you will receive an email with instructions to reset your password.
Intersubband Transitions in Quantum Wells: Physics and Device Applications I & II, Semiconductors and Semimetals, edited by H. Liu and F. Capasso (Academic, San Diego, ), Vols. 62 and Google Scholar. Additional Physical Format: Online version: Intersubband transitions in quantum wells.
San Diego, CA: Academic Press, © (OCoLC) Document Type. Liu and F c (Eds.), Intersubband Transitions in Quantum Wells: Physics and Device Applications I, vol. 62 of Semiconductors and Semimetals (Academic Press, ).
Dietze, “Nonlinear terahertz spectroscopy of semiconductor heterostructures,” Ph.D. thesis, Vienna University of Technology (). Optical saturation experiments have been performed on hh1-hh2 intersubband transitions in two samples of p-doped GaAs/AlGaAs quantum wells.
The transitions had energies of. Optical bistability is one such process which has been suggested as a viable means to achieve very highspeed switching, and for all-optical logic operations.
1 Among the successful examples is the so-called “Self-Electro-Optic-Effect Device” or SEED 2 which utilizes the quantum confined Stark effect within a semiconductor quantum well to. Fu, Z. Lu, X huang, H. Chen, and Y.
Zhao, “Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN quantum well for optoelectronic applications”, International Workshop on Nitride Semiconductors (IWN ), OctOrlando, FL, Oral Presentation.
Semiconductors and Semimetals, Volume Intersubband Transitions in Quantum Wells: Physics and Device Applications II By Robert K. Willardson, Gerd Mueller, Albert C.
Beer Récemment Consulté.This work proposes an engineering model for thermal radiation absorption due to direct intersubband transitions in doped semiconductors, which are excitations of bound electrons in the infrared spectral region.
An existing quantum-mechanical approach is to model these transitions as a continuum of damped harmonic oscillators.Semiconductor multi-quantum wells (MQWs) represent the perfect playroom for nanoscale scientists to devise novel technologies and device architectures using the fundamental laws of quantum mechanics [1,2].In the last decades, the number of applications based on a MQW structure core has been constantly expanding, and now ranges from photovoltaics and solar energy harvesting [3,4,5] to photonics.